ION BEAM INDUCED EFFECTS IN RF PLASMA CVD DEPOSITED HYDROGENATED a-C FILMS AND ATTEMPTS ON FABRICATION OF CARBON-BASED SOLAR CELLS

摘要

Hydrogenated amorphous carbon thin films on boron and phosphorous irradiation, are found to undergo changes in their physical properties. Reduction in the resistivity and optical gap were observed with changes in the ion irradiation dose. Beam current dependence on the structural, electrical and optical properties reveals the ion implantation induced localized heating effects. Heterojunction diodes are fabricated by fluorine ion implanted amorphous carbon (a-C: H) on p type Si substrates. Various metallic contacts are formed on fluorine implanted carbon side; copper contact is found to result in better a-C/p-Si heterojunction, and is found to be dose dependent. Formation of heterojunction diode confirms that the fluorine ion implanted a-C is n type. Electrical resistivity is found to reduce with the ion dose and is attributed to the combination of incorporation of ions and ion beam induced localized heating effects. Raman scattering studies resulted in the formation of typical disorder D and graphitic G Raman bands in the implanted carbon films.