Study of Oxygen Precipitation and Internal Gettering in Heavily As-doped Silicon Crystal

摘要

In this paper, the behavior of oxygen precipitation in the silicon wafers heavily doped with As after annealing were studied. The experimental results showed that the nucleation temperature of the oxygen precipitates and induced-defects in heavily As-doped Si is about 900°C. And when annealing at moderate and high temperature, the density of oxygen precipitates is higher. Both the size and density of oxygen precipitates increase with annealing time, the size decreases with the annealing temperature. TEM showed that the faults and dislocation loops induced by the oxygen precipitates were formed when the wafers were annealed at moderate temperature, and polyhedral oxygen precipitates was generated at high temperature. An improved internal gettering process was suggested for the heavily As-doped silicon.