OPTIMIZATION AND CHARACTERIZATION OF HIGHLY CONDUCTIVE AND TRANSPARENT AI-DOPED ZnO FILMS FOR SOLAR CELL APPLICATIONS

摘要

Highly conductive and transparent Al-doped ZnO (AZO) films have been deposited on corning glass by pulse laser deposition technique with XeCl laser (λ = 308 nm). The structural, optical and electrical properties of AZO films have been investigated to optimize A12O3 content, substrate temperature, target-substrate distance, thickness and oxygen pressure. Films deposited at optimized conditions show the lowest resistivity value of 1.32 * 10~(-4) Ωcm and maximum transmittance ≈91%. The optimization of the deposition parameters to obtain device quality has been discussed in terms of figure of merit. Use of oxygen gas prevents the films from black coloration. The variation in band gap has been analyzed by Burstein and Moss effect and many body interactions.