Method of manufacturing ZnO-based transparent conductive film for thin film solar cell

摘要

PROBLEM TO BE SOLVED: To provide a method by which a ZnO transparent conductive film having a performance which is equal to that of a ZnO:B transparent conductive film formed by the metal organic chemical vapor deposition(MOCVD) method and a superior moisture resistance can be formed in a large area at a high speed by reducing the influence of sputtering shocks on joint surfaces. SOLUTION: In a method for manufacturing a ZnO transparent conductive film which is used as the window layer 6 of a solar cell 1, a first conductive film (1) which works as a phase boundary protective film is formed on a high- resistance buffer (interface) layer 5 by reducing the influence of sputtering shocks on the joint surface by the low-output (=500 W) RF sputtering method by using a ZnO:Al or ZnO:Ga target. Then second and third conductive films (2) and (3) which are used as the window layer 6 are respectively formed by the DC sputtering method by which films can be formed at a high speed through a plurality of treating processes each of which is executed by using the ZnO:Al or ZnO:Ga target.