Composition, photoelectric properties, and electroluminescence of the SiGe/Si heterostructures with self-assembled nanoclusters grown by molecular beam epitaxy with vapor Ge source

摘要

The photoelectric properties and electroluminescence of the p-i-n diodes based on SiGe/Si heterostructures with self-assembled SiGe nanoclusters grown by Molecular Beam Epitaxy with vapor Ge source have been studied. The composition of the SiGe nanoclusters was studied by a new method of Scanning Auger Microscopy. A method for analysis of the photosensitivity spectra of the SiGe/Si heterostructures has been developed. The electroluminescence in the p-i-n diodes with SiGe clusters at 77K has been observed.