Molecular-beam Epitaxial Growth Of α-Zn0.05Sr0.95S Codoped With Eu And Sm On MgO(001) Substrate Via -MnS Buffer Layer

摘要

High quality -ZnxSr1–xS with a single-phase rocksalt structure can be epitaxially deposited on (001) MgO substrate using -MnS buffer layer under appropriate growth conditions. We observed efficient infrared-stimulated luminescence (ISL) with a peak at ~ 620 nm when visible-light-irradiated -Zn0.05Sr0.95S:Eu,Sm thin films were stimulated with IR light. The observed ISL intensity is stronger in Zn0.05Sr0.95S:Eu,Sm as compared to SrS:Eu,Sm. We propose that the ISL emission intensity in SrS:Eu, Sm is enhanced not only by the inclusion of Zn but also due to the growth of film at high substrate temperature.