Characterization of deep levels in n-type 4H-SiC single crystals by means of a piezoelectric photothermal and a photoluminescence spectroscopy

摘要

The deep defect levels in n-type 4H-SiC single crystal were investigated from the two physical viewpoints of nonradiative and radiative recombination by using piezoelectric photothermal and photoluminescence spectroscopy, respectively. Three peaks at 2.1, 2.4, and 2.8eV in the PL spectra and two peaks at 2.2 and 2.7eV in PPT spectra were observed. The origins of these peaks were explained by the electron transitions through impurity and defect levels in terras of a configuration coordinate model.