Impurity and defect centers of n-type 4H-SiC single crystals investigated by a photoluminescence and a piezoelectric photo thermal spectroscopies

摘要

The deep defect levels in n-type 4H-SiC single crystals were investigated by using a photoluminescence (PL) and a piezoelectric photo thermal (PPT) spectroscopies. Three peaks at 2.10, 2.35, and 2.80 eV in the PL spectra and two peaks at 2.2 and 2.7 eV in the PPT spectra were observed. Since the PPT spectrum gives the insight from the non-radiative electron transition, the relations for these observed peaks were discussed in terms of a configuration coordinate model.