High Performance Self-aligned AlN/GaN MISHEMT with In-situ SiN_x Gate Dielectric and Regrown Source/Drain

摘要

Gate-last self-aligned AlN/GaN MISHEMTs with insitu grown SiN_x gate dielectric for gate leakage suppression and regrown n~+-GaN S/D for minimizing contact resistance were demonstrated. The device with a gate length of 0.32 μm exhibited a maximum drain current density of 1310 mA/mm and a high on/off ratio of over 10~7. The current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) were 45 and 73 GHz, respectively, resulting in a high fT×LG product of 14.4 GHz·μm. The best gate-to-drain breakdown voltage up to 35.2 V was obtained for a 90 nm gate-to-regrowndrain distance, leading to a high breakdown field of 4.46 MV/cm.