High Breakdown Voltage (1590 V) AlGaN/GaN-on-Si HFETs with Optimized Deal Field Plates

摘要

In case the peak electric fields at the gate and field plate edges are sufficiently suppressed in field plated AlGaN/GaN HFETs, the electric field at the drain side first reaches the critical level inducing the channel breakdown. Therefore, the breakdown voltage can be further enhanced by adding a drain field plate that spreads out the potential distribution near the drain side. We have demonstrated state-of-the-art characteristics of AlGaN/GaN-on-Si HFETs with optimized dual field plates. The breakdown voltage of 1590 V and the specific on-resistance of 1.86 mΩ.cm~2 were achieved for the gate-to-drain distance of 15 Jim in which the gate and drain field plate lengths were 2μm and 1μm, respectively.