A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.
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机译:高击穿电压HFET包括位于衬底上的p型导电性GaN的减小的表面场(RESURF)层以及位于其上的n型导电性GaN的沟道层。 n型导电性Al x Ga 1-x N的阻挡层位于沟道层上,以形成与界面相邻并平行的横向沟道。栅电极位于覆盖横向沟道的阻挡层上,而漏电极位于与横向沟道接触的沟道层上,并且在栅电极的一侧隔开确定击穿电压的距离。源电极位于沟道层上与栅电极相对的一侧,与横向沟道接触并且还与RESURF层接触。
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