Wafer Bonding Technology for BOB-LED Manufacturing

摘要

Wafer bonding is the enabling technology for active layer transfer of AlInGaP and InGaN vertical LEDs. In this case superior thermal and electrical properties of the LEDs ensure high power operation, which is needed for future applications such as general lighting. While thermo-compression bonding is often applied for LEDs grown on GaAs, eutectic and solder bonding dominates for InGaN LEDs, generally grown on sapphire substrates. The selection of the substrate, bonding process and material system as well as appropriate adhesion layers and diffusion barriers is essential for a high yield layer transfer bonding process. In this contribution we will focus on fabrication and bonding technology for active layer transfer of red AlInGaP and blue InGaN LEDs.