ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE

机译：HGCDTE结二极管中隔离表面和散装贡献

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This paper reports the possibility of assessing the relative surface and bulk contributions in HgCdTe junction diodes by analysing the Current - voltage (I -

机译：本文通过分析电流 - 电压（I - ）报道了通过分析电流 - 电压评估HGCDTE结二极管中的相对表面和散装贡献的可能性。

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《International conference on photoelectronics and night vision devices》|2003年||共8页
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Vishnu Gopal; Sudha Gupta; R. K. Bhan; R. Pal; P. K. Chaudhary; V. Kumar; SPIE-The International Society for Optical Engineering;
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4. ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE [C] . Vishnu Gopal, Sudha Gupta, R. K. Bhan, International conference on photoelectronics and night vision devices . 2003

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ISOLATING SURFACE AND BULK CONTRIBUTIONS IN AN HgCdTe JUNCTION DIODE

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