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Passivation of HgCdTe Junction Diode By Annealing In Cd/Hg Atmosphere
Passivation of HgCdTe Junction Diode By Annealing In Cd/Hg Atmosphere
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机译:Cd / Hg气氛中HgCdTe结二极管的钝化
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摘要
A method makes photodiodes by forming a HgCdTe protective, passivation layer with high Cd composition ratio on a HgCdTe semiconductor made of Group II-VI materials. The passivation layer is formed in a Cd/Hg mixed atmosphere via an annealing process wherein vaporized Cd is diffused onto the HgCdTe surface.
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