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Passivation of HgCdTe junction diode by annealing in Cd/Hg atmosphere
Passivation of HgCdTe junction diode by annealing in Cd/Hg atmosphere
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机译:在Cd / Hg气氛中通过退火钝化HgCdTe结二极管
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摘要
A method makes photodiodes by forming a HgCdTe protective, passivation layer with high Cd composition ratio on a HgCdTe semiconductor made of Group II-VI materials. The passivation layer is formed in a Cd/Hg mixed atmosphere via an annealing process wherein vaporized Cd is diffused onto the HgCdTe surface.
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