Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride

机译：电离辐射对碲化酸镓的基础光电二极管效率的影响

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Influence of the nuclear explosion factors on basic parameters of photodiodes developed on the basis of layered gallium telluride crystals, operating in the spectral range 0.4 / 1.1 μm has been studied. Results of study of the effect pulsing gamma-irradiation and pulsing neutron-irradiation show that photoreceivers on the basis of GaTe crystals is perspective for systems operating in visible and near IR-region.

机译：核爆炸因子对基于分层砷化镓晶体开发的光电二极管基本参数的影响，研究了在光谱范围内的0.4 /1.1μm。脉冲γ辐射和脉冲中子辐射的效果的研究结果表明，在浇口晶体的基础上是在可见光和近红外区域操作的透视图。

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《International conference on photoelectronics and night vision devices》|2003年||共3页
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K.A. Askerov; F.K. Isayev; D.I. Karayev; R.Yu. Aliyev; SPIE-The International Society for Optical Engineering;
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中图分类各种摄影技术;
关键词
photodiode; photodetector; gallium telluride; single crystal; neutron-irradiation; gamma-irradiation; IR-region; efficiency; sensitivity;

机译：光电二极管;光电探测器;碲化镓;单晶;中子辐照;γ-辐照;IR区域;效率;敏感性;

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1. Fast and high photoresponsivity gallium telluride/hafnium selenide van der Waals heterostructure photodiode [J] . Afzal Amir Muhammad, Mumtaz Shoail, Iqbal Muhammad Zahir, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2021,第22期

机译：快速和高光致碲镓碲化镓/铪硒van der Waals异质结构光电二极管
2. Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis [J] . Khrypunov G. S., Meriuts A. V., Shelest T. N., Semiconductors . 2019,第1期

机译：氟伦退火对镉 - 碲化镉层晶体结构的影响及薄膜太阳能电池的基础效率
3. MEASUREMENTS OF IONIZING RADIATION: MEASUREMENT OF THE MOSSBAUER f FACTOR FOR ~125m Teγ RADIATION IN BERYLLIUM TELLURIDE [J] . V.L. Alpatov, A.V. Davydov, Yu. N.Isaev Measurement Techniques . 1999,第1期

机译：电离辐射的测量：碲化铍中〜125mTeγ辐射的MOSSBAUER因子的测量
4. Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride [C] . K.A. Askerov, F.K. Isayev, D.I. Karayev, International conference on photoelectronics and night vision devices . 2003

机译：电离辐射对碲化酸镓的基础光电二极管效率的影响
5. Impact ionization in aluminum-gallium-arsenic-antimony alloy avalanche photodiodes. [D] . Grzesik, Michael. 2009

机译：铝-镓-砷-锑合金雪崩光电二极管中的碰撞电离。
6. Radiation-induced cell transformation: transformation efficiencies of different types of ionizing radiation and molecular changes in radiation transformants and tumor cell lines. [O] . L Hieber, K Trutschler, J Smida, 1990

机译：辐射诱导的细胞转化：不同类型的电离辐射的转化效率以及辐射转化体和肿瘤细胞系中的分子变化。
7. Determination of the gallium arsenide life time influence on the efficiency of continuous and pulse generation and detection of radiation of the terahertz frequency range [O] . D.A. Kobtsev, A.V. Tyazhev, I.I. Kolesnikova, 2020

机译：砷化镓寿命对连续和脉冲产生效率的测定和太赫兹频率范围的辐射检测
8. Direct Bandgap, Ionizing Radiation Insensitive Photodiode Structures [R] . Wiczer, J. J., Dawson, L. R., Osbourn, G. C., 1981

机译：直接带隙，电离辐射不敏感光电二极管结构

Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride

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