Optical emission spectroscopy of Aluminum Nitride thin films deposited by Pulsed Laser Deposition

摘要

In this work we study the Aluminium Nitride plasma produced by Nd:YAG pulsed laser, (λ = 1064 nm, 500 mJ, τ = 9 ns) with repletion rate of 10 Hz. The laser interaction on Al target (99.99%) under nitrogen gas atmosphere generate a plasma which is produced at room temperature; with variation in the pressure work from 0.53 Pa to 0.66 Pa matching with a applied laser fluence of 7 J/cm2.The films thickness measured by profilometer was 150 nm. The plasma generated was at different pressures was characterized by Optical Emission Spectroscopy (EOS). From emission spectra obtained ionic and atomic species were observed. The plume electronic temperature has been determined by assuming a local thermodynamic equilibrium of the emitting species. Finally the electronic temperature was calculated with Boltzmann plot from relative intensities of spectral lines.