A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation

摘要

Advanced experimentation such as isotopic labeling and medium-energy ion-scattering spectroscopy has found a hybrid or transitional layer between pure silicon dioxide and pure silicon during silicon oxidation. This paper establishes a consistent model for growth of oxide by considering a volumetric reaction in the transitional layer, in addition to the reaction at the interface of SiO_x/Si. The volumetric reaction plays a more important role for thin films, while the model approaches the Deal-Grove limits for thick films.