A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation From Accumulation to Depletion Region

摘要

In this paper, a physics-based analytical C_∞ ― continuous model of MOSFET surface potential and capacitance from the accumulation to the depletion region is presented and the result is compared with 2-D numerical device simulation. Starting from the Poisson equation, an exact solution of the surface potential in the accumulation region is derived. Then, the C_∞―continuous capacitance expression is obtained and which gives a good agreement with 2-D device simulation. In addition, the importance of this model is demonstrated in the analysis of harmonic distortion.