MODELING OF MULTI-LEVEL INDUCTOR FABRICATED ON SILICON SUBSTRATE

摘要

A novel conceptual physical model is proposed for multilevel spiral inductors on silicon substrate where in the metal layers are connected in parallel through dense vias. The model takes into consideration the mutual inductance, and the inter-metal capacitance between different metal spirals. An excellent agreement between the simulated S-parameter from the extracted model and measured data is obtained. It is useful for optimization of multi metal inductor design.