CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

机译：金属化学气相沉积种植的GaAs基材上的自组装INAS量子点激光器的CW激光

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) has been achieved at the lasing wavelength of 1.18 /spl mu/m.

机译：我们报告了通过金属化学气相沉积生长的GaAs基材上的自组装INAS量子点激光器的制造和激光特性。在1.18 / SPL mu / m的激光波长下实现了具有低阈值电流（6.7mA）的室温下的连续波。

著录项

来源
《Pacific Rim Conference on Lasers and Electro-Optics》|2003年||共1页
会议地点
作者
Tatebayashi J.; Kakuma H.; Hatori N.; Ishida M.; Ebe H.; Sudo H.; Kuramata A.; Nakata Y.; Sugawara M.; Arakawa Y.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN2-53;
关键词
self-assembly; indium compounds; III-V semiconductors; quantum dot lasers; semiconductor quantum dots; gallium arsenide; optical fabrication; MOCVD; cw lasing; self-assembled InAs quantum dot lasers; GaAs substrates; metalorganic chemical vapour deposition; laser characteristics; continuous-wave lasing; room temperature; low threshold current; semiconductor lasers; 25 degC; 6.7 mA; 1.18 mum; InAs-GaAs; GaAs;

机译：自组装;铟化合物;III-V半导体;半导体量子点;砷化镓;光学制造;MOCVD;CW激光;自组装的INAS量子点激光;GAAS基材;金属有机化学气相沉积;激光特性;激光特性;激光特性;激光特性;激光特性;激光特性;激光特性;连续波激光;室温;低阈值电流;半导体激光;25℃;6.7 mA;1.18妈妈;在-GaAs;GaAs;

相似文献

外文文献
中文文献
专利

1. InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots [J] . Jun Tatebayashi, Yasuhiko Arakawa, Nobuaki Hatori, Applied Physics Letters . 2004,第6期

机译：金属有机化学气相沉积法生长的InAs / GaAs自组装量子点激光器-生长后退火对堆叠的InAs量子点的影响
2. 1.28 μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition [J] . Jun Tatebayashi, Nobuaki Hatori, Mitsuru Ishida, Applied Physics Letters . 2005,第5期

机译：通过金属有机化学气相沉积从堆叠的InAs / GaAs量子点和低温生长的AlGaAs覆层发射1.28μm激光
3. Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs/GaAs by low-pressure metalorganic chemical vapor deposition [J] . Yang T, Tsukamoto S, Tatebayashi J, Applied Physics Letters . 2004,第14期

机译：通过低压金属有机化学气相沉积提高在InGaAs / GaAs上生长的自组装InAs量子点的均匀性
4. CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition [C] . Tatebayashi, J., Kakuma, . 2003

机译：自组装InAs量子点激光器在金属有机化学气相沉积生长的GaAs衬底上的连续激光激射
5. Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition. [D] . Chung, Theodore. 2003

机译：铝砷化镓-砷化镓-砷化镓-砷化铟量子点通过低压金属有机化学气相沉积与量子阱异质结构激光器耦合。
6. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate [O] . Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, 2015

机译：硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
7. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates [O] . Bhattacharya, Arnab, Mawst, Luke J., Nayak, Sabyasachi, 1996

机译：在Gaas衬底上通过金属有机化学气相沉积生长的InGaas / InGaasp / InGap量子阱激光二极管的界面结构

CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition

摘要

著录项

相似文献

相关主题

期刊订阅