A MEMS high-Q tunable capacitor for reconfigurable microwave integrated circuits

摘要

Future microwave networks require miniature high-performance tunable elements such as switches, inductors, and capacitors. We report a micro-machined high-performance tunable capacitor suitable for reconfigurable monolithic microwave integrated circuits (MMICs). The capacitor is fabricated on a GaAs substrate using low-temperature processing, making it suitable for post-process integration with MMICs, radio frequency integrated circuits (RFICs) and other miniaturized circuits. Additionally, the insulating substrate and high-conductivity metal provide low-loss operation at frequencies over 20 GHz. The device demonstrates a capacitance of 150 fF at 0 V bias, pull-in at about 15 V to 18 V, and further linear tuning from 290 fF to 350 fF over a voltage range of 7 V to 30 V. Also, the device demonstrates self-resonance frequencies over 50 GHz, and Q's over 100 at 10 GHz. To enable integration into circuits, a simple equivalent circuit model of the device has been developed, demonstrating a good match to the measured data through 25 GHz. Initial testing to 1 billion cycles indicates that metal fatigue is the primary limitation to reliability and reproducibility, and that dielectric charging does not have a significant impact on the device. This device is promising for high-performance tunable filters, phase shifters, and other reconfigurable networks at frequencies through K-band.