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Low-Cost Deposition of Highly-Conducting Indium-Tin-Oxide Transparent Films by Chemical Process; Spray CVD and Dip Coating

机译:通过化学过程对高导电铟 - 氧化锡透明膜的低成本沉积;喷涂CVD和浸涂

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The authors reported previously low-resistivity ITO films by spraying ethanol solution of indium chloride and tin chloride using an inexpensive atomizer and a laboratory hotplate; Y. Sawada et al., thin solid films, 409 (2002) 46-50. In the present study, the dependence of the electrical properties on the tin concentration were examined more systematically over a wider compositional range by spraying vertically (downwardly) the solutions with the lower chloride concentration in order to improve the compositional controllability and the film uniformity. The minimum resistivities obtained were lowered to 1.7x10~(-4) and 7.7x 10~(-5) ohm.cm for the as-deposited and annealed films. The structures and the properties of the spray-deposited films were discussed in comparison with the films fabricated by the dip coating process.
机译:作者通过使用廉价的雾化器和实验室热板喷洒乙醇溶液和氯化锡的乙醇溶液报道了以前的低电阻率ITO膜; Y. Sawada等,薄的实心薄膜,409(2002)46-50。在本研究中,通过垂直(向下)氯化物浓度垂直(向下)溶液更系统地在更宽的成分范围内更系统地检查电性能对锡浓度的依赖性。为了改善组成可控性和膜均匀性,以提高组合物可控性和膜均匀性。获得的最小电阻率降低至1.7×10〜(-4)和7.7×10〜(-5)欧姆,用于沉积和退火薄膜。与浸涂方法制造的薄膜相比,讨论了喷雾沉积膜的结构和性质。

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