Effect of gases on the field emission properties of UNCD coated silicon field emitter arrays

摘要

We investigated electron emission from ultra nanocrystalline diamond (UNCD)-coated ungated silicon field emitter during in situ exposure to various gases during I vs. V and I vs. Time measurements. The silicon field emitter arrays were fabricated by the subtractive tip fabrication process and coated with UNCD using the microwave plasma method developed at Argonne National laboratory.