Effect of process parameters on the growth behavior of carbon nanotube by microwave plasma chemical vapor deposition

摘要

Carbon nanotubes(CNTs) have received a considerable attention because of the prospect of new fundamental science and many potential applications. CNTs are promising candidates, particularly, for cold cathode field emitters because of their unique electrical properties, high aspect ratios and small radii of curvature at their tips[1-2]. For applications such as flat panel displays, vertical alignment, emission properties, low temperature growth, and size control of CNTs are important. These can be controlled by process parameters such as power density, growth temperature, gas flow rate, and the grain size and morphology of catalytic metal.