ADVANCED DEFECT CHARACTERIZATION BY COMBINING TEMPERATURE- AND INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (TDLS AND IDLS)

摘要

Apart from detecting the presence of electrically active defects, lifetime measurements allow for a direct identification of defects if the injection and temperature dependence is analyzed. Recent studies have revealed that Temperature Dependent Lifetime Spectroscopy (TDLS) and Injection Dependent Lifetime Spectroscopy (IDLS) are complementary: while the energy level E{sub}t is more easily gained from TDLS, IDLS is more adequate to determine the capture cross section ratio k = σ{sub}n/σ{sub}p. The present work demonstrates on intentionally metal-contaminated silicon that a complete defect characterization is achievable by combining IDLS and TDLS. Additionally, it is shown for the first time that k and the band half of the defect location can often be determined from TDLS alone if the entire TDLS-curve is modeled.