Influence of substrate orientation on self-assembled InAs/GaAs quantum dots for long wavelength emission grown by molecular beam epitaxy

摘要

MBE grown self-organised InAs QDs on GaAs (100) and (n11) substrates have been investigated by AFM and PL. The results show that substrate orientations have a strong effect on the properties of QDs. The dependence of PL for different oriented substrate has been examined. It was found that, by reducing the strain and quantum confinement in InAs QDs, long-wavelength PL emissions was obtained.