Energy Relaxation Time and Microwave Noise in InAs/AISb/GaSb/GaAs Heterostructures

摘要

Experimental technique based on microwave noise measurements is used to evaluate energy dissipation by hot electrons in a typeⅡheterostructure consisting of InAs and GaSb with a thin AlSb barrier layer between them and containing a two-dimensional electron gas (2DEG). The energy relaxation time is estimated at 80 K and 300 K lattice temperatures. The energy relaxation time is almost independent of electric field and lattice temperature.