Experimental study of 600V GaN transistor under the short-circuit aging tests

摘要

This paper presents experimental short-circuit aging tests of a 600V GaN (Gallium nitrite) GIT (Gate Injection Transistor). The short circuit aging tests effect under the drain voltage of 35 V and the two short-circuit durations (1.1ms, 1.9ms) are investigated. The degradation mode due to different energy applied during the short circuit aging tests is well shown in this paper. A comparison with a SiC (Silicon carbide) Technology transistor, subject to equivalent aging test, is proposed in the paper.