Growth of Al_xGa_(1-x)As/GaAs Heterostructure using Liquid Phase Epitaxy (LPE) and its Characterization

摘要

Al_xGa_(1-x)As epitaxial layer is widely used for the fabrication of opto-electronics and Photovoltaic devices such as Lasers and solar cells. Al_xGa_(1-x)As/GaAs hetero structures were grown using Liquid Phase Epitaxy Technique (LPE). Horizontal sliding boat with three-zone furnace was used. Super cooling technique was sued with a cooling rate of 0.5 °C/minute. The Epitaxial layer has been analyzed by optical microscope, Secondary Ion Mass Spectroscopy (SIMS) and the mechanical properties of the layer have by Vickers hardness test.