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Growth and Characterization of K_2Cr_2O_7 Doped PbI_2 Single Crystal

机译:K_2CR_2O_7掺杂PBI_2单晶的生长和表征

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Load iodide material was purified using the zone refining technique. K_2Cr_2O_7 was doped 1% w/w as an impurity. The optical band gap of the pure crystal was measured which was observed ~2.71 eV and it reduces to 2.62 after doping of K_2Cr_2O_7. The conductivity of pure and doped material was also measured at different temperature. It was found that doping increases the conductivity.
机译:使用区域精制技术纯化负荷碘化物。 K_2CR_2O_7被掺杂1%w / w作为杂质。测量纯晶体的光带间隙,观察到〜2.71eV,在K_2CR_2O_7的掺杂后降低至2.62。在不同的温度下也测量纯净和掺杂物质的电导率。发现掺杂增加了电导率。

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