Silicon Heterostructure Field Effect Transistors: Status and Trends

摘要

For high frequency analog applications CMOS is not popular as CMOS has been assumed so far to have poor capability compared with silicon bipolar and compound semiconductor devices. Recent advances in CMOS devices has significantly improved the CMOS RF characteristics. Potential of CMOS technology in RF frontends for wireless communication is reviewed. Present status of the silicon heterostructure field effect transistors in the SiGe and SiGeC material systems is presented.