Analytical Design Methodology of a Novel Drift-layer for Super-Junction Power MOSFET: CoolMOS~(TM)

摘要

Here a simple methodology for design of the drift layer using Super-Junction Theory is developed. Analytically designed drift layer is used to simulate the CoolMOS and it is verified for the design parameters and terminal characteristics. Simulation result shows that this methodology does give a first order design method. The On resistance and Break down voltage conflict at high voltage drift layer is also discussed along with possible solution. The limitations of the SJ-Theory for implementation in CoolMOS, are also discussed.