In low resistive Mn-Zn ferrite the electron diffusion can play an important role in domain walls damping. Low resistive ferrites were obtained by doping with Bi{sub}2O{sub}3 Mn Zn ferrite raw material. The doped ferrites are characterized by different microstructure. Small values of the activation energy in the ferrimagnetic regions (2-80meV) were measured. By applying an AC electric field in phase and perpendicular to the magnetic field the hysteresis loop shape changes. The electron diffusion plays an important role in the damping of the movement of domains walls in ferrite with low resistivity and ME compatibility can serve to design a new generation of sensors.
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