High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy

摘要

Ultraviolet (UV) light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a patterned sapphire substrate (P88) using a single growth process of metalorganic vapor phase epitaxy. The GaN layer grown by lateral epitaxy on a patterned substrate (LEPS) has a dislocation density of 1.5×10{sup}8 cm{sup}(-2). The LEPS-UV-LED chips were mounted on the Si bases in a flip-chip bonding arrangement. When the UV-LED was operated at a forward-biased current of 20 mA at room temperature, the emission wavelength, the output power and the external quantum efficiency were estimated to be 382 nm, 15.6 mW and 24%, respectively. With increasing forward-biased current, the output power increased linearly and was estimated to be approximately 38 mW at 50 mA.