Growth of submicron AlGaN/GaN/AlGaN heterostructures by hydride vapor phase epitaxy (HVPE)

摘要

Multilayer AlGaN/GaN epitaxial structures were grown on SiC by HVPE method. Characterization of the grown structures was performed using SEM, SIMS, mercury probe, electroluminescence and photoluminescence techniques. Thicknesses of nitride layers in nanometer range were achieved. Stimulated emission from double confined heterostructure grown by HVPE was detected at room temperature under optical pumping. Short wave UV electroluminescence (λ{sub}max ≈340-350 nm) was measured for p-AlGaN/n-AlGaN structures having up to 38 mol% and 9 mol% of AlN in p-AlGaN carrier emitter layers and n-AlGaN light emitting layers, respectively.