Apparatus and Method of Hydride Vapor Phase Epitaxy for AlGaN Growth

摘要

PURPOSE: AN HVPE(Hydride Vapor Phase Epitaxy) growth apparatus and method for growing an AlGaN crystal are provided to control easily the temperature of a source metal and the compositional ratio of Al and Ga in the AlGaN crystal and to simplify the structure of the apparatus by using a mixture of Al and Ga as the source metal. CONSTITUTION: An HVPE growth apparatus includes a reaction chamber, a gas supply part and a temperature control part. The reaction chamber(110) stores a mixture of Al and Ga and a substrate(140), so that discrete storage parts for Al and Ga are unnecessary in the chamber. The gas supply part(120) is used for supplying an HCl gas, an NH3 gas and a carrier gas of the HCl gas and NH3 gas to the reaction chamber. The temperature control part(130) is used for controlling temperatures of the mixture and the substrate.