首页> 外文会议>Denver X-ray conference >COMPARISON OF THREE UNIVERSAL CURVES FOR THE ESCAPE PROBABILITY OF X-RAY EXCITED ELECTRONS II. EVALUATION OF LAYER THICKNESSES AS DETERMINED BY TOTAL ELECTRON YIELD (TEY)
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COMPARISON OF THREE UNIVERSAL CURVES FOR THE ESCAPE PROBABILITY OF X-RAY EXCITED ELECTRONS II. EVALUATION OF LAYER THICKNESSES AS DETERMINED BY TOTAL ELECTRON YIELD (TEY)

机译:三种通用曲线对X射线激发电子II的逃逸概率的比较。通过电子收率(Tey)确定的层厚度评价

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The validity and limitations of the concept of universal curves for the escape probability of x-ray excited electrons were investigated by a series of TEY-measurements performed on thin pure element layers and ternary layers on GaAs-wafers. Layer thicknesses were chosen from a few nanometers up to several hundred nanometers and the electron energies covered a range from approximately 1 keV up to 20 keV. The essential result of TEY-measurements is that the layer thicknesses from TEY and from other methods are in very good agreement. Thus, the experiments are besides a confirmation of the analogy of the theoretical approaches of quantitative x-ray analysis and TEY analysis an excellent verification of the concept of universal curves for the escape probability of x-ray excited electrons.
机译:通过在GaAs-晶片上的薄纯元层和三元层进行的一系列Tey-测量研究了X射线激发电子的逃避概率的通用曲线概念的有效性和限制。层厚度从几纳米的厚度选择,高达数百纳米,电子能量覆盖从大约1keV的范围高达20keV。 Tey-测量的基本结果是从Tey和其他方法的层厚度非常好。因此,除了定量X射线分析和Tey分析的理论方法的比喻的确认之外,该实验是对X射线激发电子的逃避概率的通用曲线概念的优异验证。

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