Total electron yield of electrons emitted by x-ray excitation from layered AlxGa1-xAs-GaAs structures

摘要

Thin layers of AlxGa1-xAs on GaAs substrates are characterized by thickness t and composition x. Measuring the GaK total electron yield (TEY) jumps delivers either x for known t or vice versa. A result of this investigation is the possibility of determining both quantities of a single layer structure by a systematic variation of the incidence angle of x-radiation with regard to the specimen surface in the range 1-10degrees. Owing to the influence of the statistical significance of the measured data on the computed values of x and t, an x-ray source with sufficient photon flux is an essential requirement. Possible applications are x-values from 0 up to 0.5 and thicknesses from 0 up to 100 nm. Copyright (C) 2002 John Wiley Sons, Ltd. [References: 5]