Metrology of a Precision Plasmonic Lithography Stage

摘要

Plasmonic lithography is a promising technology for next generation nanoscale manufacturing providing a solution of semiconductor industry to continue to shrink linewidths to less than 20 nm. To achieve these dimensions it is necessary to integrate all the components into a whole manufacturing system. This system needs to be validated metrologically. In this paper, a thorough metrology scheme is proposed to model, measure, calibrate and correct the systematic errors of the stage's positioning performance. Capacitance gages and interferometers provide the critical assessments are used for geometric errors. Thermal and environmental deviations will be studied separately. A detailed systematic error model based on homogeneous transformation matrices (HTMs) has been derived.