首页> 外国专利> METHOD FOR MAKING STAMP FOR PLASMONIC NANO LITHOGRAPHY APPARATUS PLASMONIC NANO LITHOGRAPHY APPARATUS

METHOD FOR MAKING STAMP FOR PLASMONIC NANO LITHOGRAPHY APPARATUS PLASMONIC NANO LITHOGRAPHY APPARATUS

机译:等离子纳米光刻设备的印章制作方法等离子纳米光刻设备的印章制作

摘要

The present invention relates to a method for manufacturing a stamp unit plasmonic nanolithography, nano plasmonic of the present invention A stamp manufacturing method for a lithographic apparatus is a metal pattern forming method comprising: forming a metal pattern is provided as a material having a plasmonic 0 people (plasmonic resonance) characteristics on a substrate; Hydrophobic treatment comprising a hydrophobic treatment by coating of a hydrophobic film on the surface of the substrate and the metal pattern; Hydrophilic hydrophilic treatment step for selectively processing only the outer surface of the metal pattern; Buffer layer lamination step of laminating the substrate and the buffer layer on the metal pattern; And a buffer layer coupled to the metal pattern to the transfer coupling toward the base of the light-transmitting material from the substrate; characterized in that it comprises a Therefore, according to the present invention, the light diffracted by the surface plasmon energy is provided to overcome the limitations that can plasmonic lithography stamp for nano-device manufacturing method and a plasma mode nicks nanolithography apparatus for fine pattern formation. ;
机译:本发明涉及一种用于制造印模单元等离子纳米光刻的方法,本发明的一种纳米等离子光刻设备的印模制造方法是一种金属图案形成方法,其包括:形成金属图案作为具有等离子0的材料。基板上的人物(等离子体共振)特性;疏水处理包括通过在基板和金属图案的表面上涂覆疏水膜来进行疏水处理;亲水性亲水处理步骤,仅选择性地处理金属图案的外表面;缓冲层的层压步骤是将基板和缓冲层层压在金属图案上;缓冲层耦接至金属图案,以从基板朝向透光材料的基底传递耦接;因此,根据本发明,提供了由表面等离子体激元能量衍射的光,以克服可用于等离子光刻技术的纳米器件制造方法和用于精细图案形成的等离子模式刻痕纳米光刻设备的局限性。 。 ;

著录项

  • 公开/公告号KR101399440B1

    专利类型

  • 公开/公告日2014-05-28

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120066177

  • 发明设计人 정주연;최준혁;이응숙;한재원;

    申请日2012-06-20

  • 分类号G03F7/00;H01L21/027;G03F7/20;B29C33/42;

  • 国家 KR

  • 入库时间 2022-08-21 15:40:52

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