首页> 外国专利> METHOD FOR MANUFACTURING STAMP FOR PLASMONIC NANO-LITHOGRAPHY AND APPARATUS FOR PLASMONIC NANO-LITHOGRAPHY

METHOD FOR MANUFACTURING STAMP FOR PLASMONIC NANO-LITHOGRAPHY AND APPARATUS FOR PLASMONIC NANO-LITHOGRAPHY

机译:等离子体纳米光刻技术的制造方法及等离子体纳米光刻设备

摘要

The present invention relates to a method for manufacturing a stamp for plasmonic nano-lithography. The method for manufacturing a stamp for plasmonic nano-lithography comprises: a metal pattern formation step which forms metal patterns on a substrate; a hydrophobic treatment step which coats the outer surface of the substrate and the metal patterns with hydrophobic thin films for hydrophobic treatment; a hydrophilic treatment step which selectively conducts hydrophilic treatment on the outer surface of the metal patterns; a buffer layer lamination step which laminates the buffer layer on the substrate and the metal patterns; and a combination step which transfers the metal patterns and the buffer layer from the substrate to a light permeable base side. The present invention provides the method for manufacturing the stamp for plasmonic nano-lithography and the apparatus for plasmonic nano-lithography which can overcome limitation of light diffraction using surface plasmon energy and form micropatterns.;COPYRIGHT KIPO 2014;[Reference numerals] (AA) Start; (BB) End; (S105) Pretreatment step; (S110,S210) Metal pattern formation step; (S120) Hydrophobic treatment step; (S130) Hydrophilic treatment step; (S131) Polymer layer lamination step; (S132) First lamination step; (S133) Plasma treatment step; (S134) Second lamination step; (S135) First removal step; (S136) Selective treatment step; (S137) Second removal step; (S140) Buffer layer lamination step; (S150) Combination step; (S160) Anti-sticking layer lamination step
机译:本发明涉及一种用于等离子体纳米光刻的压模的制造方法。用于等离子体纳米光刻的压模的制造方法包括:金属图案形成步骤,该金属图案形成步骤在基板上形成金属图案。疏水处理步骤,用疏水薄膜覆盖衬底的外表面和金属图案以进行疏水处理;亲水处理步骤,在金属图案的外表面上选择性地进行亲水处理;缓冲层层压步骤,其将缓冲层层压在基板和金属图案上;结合步骤是将金属图案和缓冲层从基板转移到透光基底侧。本发明提供了用于制造等离子纳米光刻的印模的方法和用于等离子纳米光刻的设备,该方法可以克服使用表面等离子能量的光衍射的局限性并形成微图案。.COPYRIGHTKIPO 2014; [参考数字](AA)开始; (BB)结束; (S105)预处理步骤; (S110,S210)金属图案形成步骤; (S120)疏水处理步骤; (S130)亲水处理步骤; (S131)聚合物层的层压步骤; (S132)第一层压步骤; (S133)等离子体处理步骤; (S134)第二层压步骤; (S135)第一去除步骤; (S136)选择性处理步骤; (S137)第二去除步骤; (S140)缓冲层的层压步骤; (S150)组合步骤; (S160)防粘层层压步骤

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