Swing curve phase and amplitude effects in optical lithography

摘要

Resist swing curves have been constructed practically, and by lithography modeling, for a conventional I-line resist both for dimensions at the substrate interface and at the top of the resist. Top SEM linewidth measurements were difficult to take repeatably in automatic mode so an enhanced measurement technique was developed. The effect of stepper focus on swing curve amplitude has been studied and, for substrate dimensions, amplitude increases as focus moves away from its optimum setting.