Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

摘要

BaTO/sub 3/ films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt-coated fused silica and [100]MgO substrates. Ba(DPM)/sub 2/ and Ti(O-i-C/sub 3/H/sub 7/)/sub 2/(DPM)/sub 2/ were used as Ba and Ti sources, respectively. BaTiO/sub 3/ films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO/sub 3/ films increased with decreasing total pressure. BaTiO/sub 3/ polycrystalline films with thickness of 1 /spl mu/m had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 M/spl Omega/m at room temperature.