Suppression of tungsten irregular growth in W chemical vapor deposition

摘要

W irregular growth in low temperature W-CVD processes is the most important problem We succeeded control of W irregular growth by adjusting SiH{sub}4/WF{sub}6 flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases ambient. This paper describes control of the W irregular growth in low temperature W-CVD processes. In addition, the mechanism of W irregular growth has been studied.