KRF EXCIMER LASER ANNEALING FOR ULTRA SHALLOW JUNCTION FORMATION: APPROACH FOR IRRADIATION ENERGY DENSITY REDUCTION

摘要

KrF excimer laser annealing has been invesitigated for ultra-shallow low resitive junction formation necessary for MOS device scaling. The junction sheet resitance can be improved by multi-pulse irradiation or introduction of heat assist. By the heat assit method, laser energy density to obtain 500 W/sq. for 20 nm depth junction was reduced about by half.