Use of a first krf - excimer laser having a wavelength of 248 nm and a pulse duration of 30 ns for the laser pulse deposition of thin layers on silicon - and hard metal - substrates, wherein the laser beam is focused onto a target and with a pulse repetition frequency of 1 to 50 hz and directed in such a way that this laser beam spiral - or in a grid at a point with a constant vector velocity over the target is guided, and a second krf - excimer laser for voltage reduction in the layers, characterized by the,that the laser beams of the first krf - excimer laser– either with an energy flux density of 5 to 20 j / cm2 for the laser pulse deposition of amorphous diamond-like carbon coatings having up to 90% sp3-Bonding components with growth rates of 1 to 100 nm / min.– or with an energy flux density of from 20 to 60 j / cm2 for the laser pulse deposition of almost phase-pure, polycrystalline, cubic boron nitride - layers with growth rates of 1 to 100 nm / min are directed to the target andthat the on the substrate or the already deposited layer directed laser beams of the second krf - excimer laser with a pulse repetition frequency of 1 to 50 hz for the stress reduction of the carbon layers or of the boron nitride - layers are used, wherein– the growing amorphous diamond-like carbon coating or in the case of larger substrate surfaces areas of the amorphous diamond-like carbon layer with heating pulses of the second krf - excimer laser with an energy flux density of from 0,1 to about 1 j / cm2 either in alternating manner to the layer forming part of the same current pulses from the target or after in each case one sub-layer thicknesses increase of 150 to 300 nm to 1000 to 5000 heating pulses or– the growing cubic boron nitride - layer, either simultaneously or in the case of larger substrate surfaces areas of the cubic boron nitride - layer with heating pulses of the second krf - excimer laser with an energy flux density of from 0,1 to 2 j / cm2 either in alternating manner to the layer forming part of the same current pulses from the target or after in each case one sub-layer thicknesses increase of 500 to 1000 nm, with 1000 to 10000 heating pulsesto be irradiated.
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机译：第一波长为248 nm，脉冲持续时间为30 ns的krf-准分子激光器用于在硅和硬质金属衬底上进行薄层激光脉冲沉积的用途，其中激光束聚焦在目标上脉冲重复频率为1到50 hz，并以这种方式定向，使得该激光束在目标上以恒定矢量速度旋转成螺旋状或在栅格中被引导，并在其内部降低电压的第二个krf准分子激光被引导。层，其特征在于，第一krf-受激准分子激光束的能量通量密度为5至20 j / cm 2 ，用于无定形类金刚石碳的激光脉冲沉积具有高达90％sp 3 键合成分的涂层，生长速率为1至100 nm / min。–或能量通量密度为20至60 j / cm 2 用于几乎相纯，多晶立方氮化硼的激光脉冲沉积-生长速率为1至100 nm /将min对准目标，并在衬底或第二krf-受激准分子激光器的已沉积层上定向激光束，脉冲重复频率为1到50 hz，以降低碳层或氮化硼的应力-使用以下层：–生长中的非晶态类金刚石碳涂层，或者在更大的基材表面情况下，利用第二krf的加热脉冲的非晶态类金刚石碳层的区域-准分子激光器的能量通量密度为0， 1至约1 j / cm 2 交替交替形成形成来自目标的相同电流脉冲的一部分的层，或者在每种情况下将一个子层的厚度增加150至300 nm至1000到5000个加热脉冲或–增长的立方氮化硼层，同时或在较大的基体表面面积的情况下，立方氮化硼层-带有第二krf-受激准分子激光器的加热脉冲，能量通量密度为f rom交替从0.1到2 j / cm 2 到形成来自目标的相同电流脉冲的一部分的层，或者在每种情况下一个子层厚度增加500至1000 nm之后照射1000至10000个加热脉冲。
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