Reflectivity of the Silicon Semiconductor Substrate and its Dependence on the Doping Concentration and Intensity of the Irradiation

摘要

Optical constants of semiconductor substrate used in production of integrated circuits are very different from that of crystalline and pure Silicon. The front side of the wafer may have a region which is opaque or may be semi-transparent even at elevated temperatures. The back side of the production substrate has gettering treatment which also alters the optical parameters. This work shows that those optical constants as described in previous publications are not relevant to the state of the art production type of material. The relationship between optical constants and emissivity is discussed and compared with measured data.