A case on the application of passive voltage contrast (PVC) and Focused Ion Beam (FIB) on failure analysis of metal interconnection or Via defect in wafer fabrication was studied. We have proposed a simple, efficient and cost-saving identifying method of locating the 1st, 2nd, 3rd and more defective via in the via chain through the FIB-induced PVC and its precise cross-sectioning. Such technique proves to be useful as it enables us to understand whether if all the defective vias in the via chain exhibit the same failing phenomenon or display any particular failing pattern which will facilitate the failure analysis or process engineers to find out the failure mechanism.
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