TECHNOLOGY OF THIN FILM RESISTORS WITH WIDE RANGE OF VALUES ON SINGLE SUBSTRATE

机译：单衬底上具有宽范围值的薄膜电阻技术

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摘要

Production of thin film resistors with wide range of values on single substrate on basis of methods of thin film technology is presented in this paper.

机译：本文提出了基于薄膜技术方法在单个基板上具有宽范围值的薄膜电阻。

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来源
《International symposium on microelectronics technologies and microsystems》|2001年||共3页
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作者
Zenon GOTRA; Oleg MELNYK; Danuta PROSZAK;
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原文格式 PDF
正文语种
中图分类微电子学、集成电路（IC）;
关键词
thin film; resistive elements;

机译：薄膜;电阻元件;

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1. Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor [J] . Huan-Yi Cheng, Ying-Chung Chen, Chi-Lun Li, Materials Sciences and Applications . 2016,第12期

机译：可调电阻温度系数的Cr-Si和Ni-Cr单层薄膜电阻器和双层薄膜电阻器的开发
2. Electrical properties of thin-film resistors in a wide temperature range [J] . Winiarski Pawel, Klossowicz Adam, Wroblewski Jacek, Circuit World . 2015,第3期

机译：薄膜电阻在宽温度范围内的电性能
3. Comparative analysis of Ni-Cr/Pt thin film resistors on silicon and GaAs substrates for IPD technology [J] . Cong Wang, Nam-Young Kim Indian journal of engineering and materials sciences . 2012,第5期

机译：IPD技术在硅和GaAs衬底上的Ni-Cr / Pt薄膜电阻器的比较分析
4. TECHNOLOGY OF THIN FILM RESISTORS WITH WIDE RANGE OF VALUES ON SINGLE SUBSTRATE [C] . Zenon GOTRA, Oleg MELNYK, Danuta PROSZAK International symposium on microelectronics technologies and microsystems . 2001

机译：单衬底上具有宽范围值的薄膜电阻技术
5. Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates. [D] . Sunder, Madhana. 2009

机译：在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
6. Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications [O] . Huey-Ru Chen, Ying-Chung Chen, Ting-Chang Chang, 2016

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7. La0.7Sr0.3MnO3CMR thin film resistor deposited on SiO2/Si and Si substrates by rf magnetron sputtering for infrared sensor [O] . Sun-Gyu Choi, A. Sivasankar Reddy, Byoung-Gon Yu, 2008

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TECHNOLOGY OF THIN FILM RESISTORS WITH WIDE RANGE OF VALUES ON SINGLE SUBSTRATE

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